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Method for forming a Vertically Movable Gate Field Effect Transistor (VMGFET) on a Silicon-on-Insulator (SOI) wafer

Description: The technology encompasses a semiconductor with source and drain regions, a gate electrode situated between these regions, and an insulator comprising an air layer and a gate oxide layer. Uniquely, the gate electrode is vertically movable within the air layer of the insulator, offering distinct advantages in conductivity and performance....

Published: 4/14/2025 | Inventor(s): In-Hyouk Song, Byoung Hee You, Kang-Hee Lee

Keywords(s): Enhancing Electrical Conductivity, Semiconductor Device, Vertically Movable Gate Electrode

Category(s): Semiconductors, Engineering