Search Results - semiconductors

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Resistive Switching in Oxides Grown Directly on Si Wafers via Novel Electronic Mechanism

Description: Our research demonstrates Resistive Switching (RS) behavior in SrTiO3 layers grown directly on silicon substrates. This behavior is attributed to a novel physical mechanism that leverages the semiconductor band's electronic structure at the Si/SrTiO3 interface. Specifically, the conduction band offset between Si and SrTiO3 creates...

Published: 4/14/2025 | Inventor(s): Nikoleta Theodoropoulou, Patrick Kollias, Ryan Cottier

Keywords(s): Neuromorphic Systems, Non-volatile Memory Devices, Si Wafers

Category(s): Semiconductors, Materials

Semiconductor device structure on thermally enhanced diamond, and method associated with same

Description: The technology presents an innovative approach to fabricate GaN-on-diamond (and other semiconductor-on-diamond) wafers without the need for wafer bonding, which traditionally involves a dielectric layer that compromises thermal conductivity. By eliminating the use of low thermally conductive dielectric layers in the wafer bonding process,...

Published: 4/14/2025 | Inventor(s): Raju Ahmed, Edwin Piner

Keywords(s): AIGaN/GaN HEMT, CVD diamond, ELOG, GaN-on-diamond, TBR

Category(s): Semiconductors, Materials, Engineering

Method for forming a Vertically Movable Gate Field Effect Transistor (VMGFET) on a Silicon-on-Insulator (SOI) wafer

Description: The technology encompasses a semiconductor with source and drain regions, a gate electrode situated between these regions, and an insulator comprising an air layer and a gate oxide layer. Uniquely, the gate electrode is vertically movable within the air layer of the insulator, offering distinct advantages in conductivity and performance....

Published: 4/14/2025 | Inventor(s): In-Hyouk Song, Byoung Hee You, Kang-Hee Lee

Keywords(s): Enhancing Electrical Conductivity, Semiconductor Device, Vertically Movable Gate Electrode

Category(s): Semiconductors, Engineering

Material Selective Regrowth Structure and Method

Description: This technology outlines a precise method for constructing nanoscale structures by forming a window in a semiconductor structure and sequentially depositing and regrowing materials within this window. The process involves a substrate, a first layer, and a mask layer, where a second layer is deposited such that a gap remains. This gap is...

Published: 4/14/2025 | Inventor(s): Edwin Piner

Keywords(s): Depositing and Regrowing Materials, Nanoscale Structures, Semiconductor Structure

Category(s): Nanotechnology, Semiconductors