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Semiconductor device structure on thermally enhanced diamond, and method associated with same

Description: The technology presents an innovative approach to fabricate GaN-on-diamond (and other semiconductor-on-diamond) wafers without the need for wafer bonding, which traditionally involves a dielectric layer that compromises thermal conductivity. By eliminating the use of low thermally conductive dielectric layers in the wafer bonding process,...

Published: 4/14/2025 | Inventor(s): Raju Ahmed, Edwin Piner

Keywords(s): AIGaN/GaN HEMT, CVD diamond, ELOG, GaN-on-diamond, TBR

Category(s): Semiconductors, Materials, Engineering