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Resistive Switching in Oxides Grown Directly on Si Wafers via Novel Electronic Mechanism

Description: Our research demonstrates Resistive Switching (RS) behavior in SrTiO3 layers grown directly on silicon substrates. This behavior is attributed to a novel physical mechanism that leverages the semiconductor band's electronic structure at the Si/SrTiO3 interface. Specifically, the conduction band offset between Si and SrTiO3 creates...

Published: 4/14/2025 | Inventor(s): Nikoleta Theodoropoulou, Patrick Kollias, Ryan Cottier

Keywords(s): Neuromorphic Systems, Non-volatile Memory Devices, Si Wafers

Category(s): Semiconductors, Materials