Semiconductor device structure on thermally enhanced diamond, and method associated with same

Description:

The technology presents an innovative approach to fabricate GaN-on-diamond (and other semiconductor-on-diamond) wafers without the need for wafer bonding, which traditionally involves a dielectric layer that compromises thermal conductivity. By eliminating the use of low thermally conductive dielectric layers in the wafer bonding process, this invention significantly improves the thermal properties of the resulting wafers.

Key Advantages:

• Simplified fabrication process compared to traditional methods
• Superior thermal conductivity of the final product
• Eliminates the need for dielectric adhesion layers that degrade thermal performance
• Potential for higher device performance and reliability

Problems Solved:

• Complexity and high costs associated with traditional semiconductor-on-diamond wafer fabrication
• Reduced thermal conductivity due to dielectric adhesion layers in wafer bonding

Market Applications:

• High-performance electronic and optoelectronic devices
• Advanced cooling solutions for semiconductor devices
• Applications requiring high thermal management capabilities