Search Results - Semiconductors

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Pulsed Laser Annealing for Diamond Doping

Description: This innovative method uses pulsed laser annealing (PLA) to incorporate and activate dopants in diamond thin films by first depositing a dopant precursor layer on the diamond surface and then applying targeted laser pulses. The process improves doping precision while reducing thermal damage compared to conventional techniques. Experimental...

Published: 3/10/2026 | Updated: 3/10/2026 | Inventor(s): Ariful Haque, Saif Taqy

Keywords(s): Microelectronics, Nanotechnology, Semiconductor Materials, Semiconductors

Category(s): Nanotechnology, Semiconductors

Pulsed Laser Annealing Doping Technique for Aluminum Nitride (AlN)

Description: This innovative technique involves depositing a dopant precursor film on AlN substrates followed by PLA, which facilitates efficient dopant incorporation and activation. The process leverages rapid, localized heating to overcome challenges associated with doping AlN’s ultrawide bandgap and high resistivity. Validation through X-ray...

Published: 3/10/2026 | Updated: 3/10/2026 | Inventor(s): Ariful Haque, Saif Taqy

Keywords(s): Microelectronics, Nanotechnology, Semiconductor Materials, Semiconductors

Category(s): Semiconductors, Nanotechnology

FPGA-Based Architecture for Quantum LDPC Error Correction

Description: This technology introduces a hardware-accelerated, distributed Quantum Low-Density Parity-Check (LDPC) decoder implemented on FPGA, designed to optimize the Union–Find decoding algorithm for scalable, high-throughput quantum error correction. By leveraging multiple BRAM banks to eliminate read/write contention and using a pipelined...

Published: 3/18/2026 | Updated: 3/10/2026 | Inventor(s): Geonhee Cho

Keywords(s): Error Correction, Quantum Computing Hardware, Semiconductors

Category(s): Semiconductors, Data/AI

Intrinsic Superconducting Spintronics

Description: This technology explores the intrinsic properties of superconducting materials combined with spintronics to enable new forms of data processing and storage. Currently in the proposal stage, the project aims to develop experimental results that could revolutionize superconducting logic circuits, quantum computing components, and magnetic...

Published: 12/16/2025 | Updated: 12/16/2025 | Inventor(s): Nathan Satchell

Keywords(s): Engineering, Quantum Computing, Semiconductors, Spintronics

Category(s): Engineering, Semiconductors

Surface Doping of Polycrystalline CVD Diamond Via Submerged Laser Annealing for Semiconductor Applications

Description: This innovation presents a pioneering method to dope polycrystalline CVD diamond by first immersing the diamond samples in a dopant-containing solution followed by a pulsed laser annealing under ambient conditions. This two-step process promotes the diffusion and activation of dopant atoms like boron into the diamond lattice without compromising...

Published: 3/18/2026 | Updated: 12/16/2025 | Inventor(s): Ariful Haque, Adedayo Alaga, Saif Taqy

Keywords(s): Material Science, Nanotechnology, Semiconductor Technology, Semiconductors

Category(s): Nanotechnology, Semiconductors, Material Science

Embedded Agricultural Decision System and Autonomous Field Implementation (Farmer on a Chip)

Description: The "Farmer on a Chip" is an innovative system-on-chip or embedded processor designed to perform autonomous agricultural management by integrating sensing, data analysis, machine learning, and optional generative AI. It operates independently from centralized infrastructure, making real-time irrigation, fertilization, and plant...

Published: 12/16/2025 | Updated: 12/16/2025 | Inventor(s): Bahram Asiabanpour

Keywords(s): Agricultural Technology, Artificial Intelligence (AI), Edge Computing, Embedded Systems, Semiconductors

Category(s): Agriculture, Data/AI, Semiconductors

Resistive Switching in Oxides Grown Directly on Si Wafers via Novel Electronic Mechanism

Description: Our research demonstrates Resistive Switching (RS) behavior in SrTiO3 layers grown directly on silicon substrates. This behavior is attributed to a novel physical mechanism that leverages the semiconductor band's electronic structure at the Si/SrTiO3 interface. Specifically, the conduction band offset between Si and SrTiO3 creates...

Published: 3/4/2026 | Updated: 5/14/2025 | Inventor(s): Nikoleta Theodoropoulou, Patrick Kollias, Ryan Cottier

Keywords(s): Neuromorphic Systems, Non-volatile Memory Devices, Si Wafers

Category(s): Semiconductors, Materials

Semiconductor device structure on thermally enhanced diamond, and method associated with same

Description: The technology presents an innovative approach to fabricate GaN-on-diamond (and other semiconductor-on-diamond) wafers without the need for wafer bonding, which traditionally involves a dielectric layer that compromises thermal conductivity. By eliminating the use of low thermally conductive dielectric layers in the wafer bonding process,...

Published: 11/11/2025 | Updated: 12/19/2024 | Inventor(s): Raju Ahmed, Edwin Piner

Keywords(s): AIGaN/GaN HEMT, CVD diamond, ELOG, GaN-on-diamond, TBR

Category(s): Semiconductors, Materials, Engineering

Method for forming a Vertically Movable Gate Field Effect Transistor (VMGFET) on a Silicon-on-Insulator (SOI) wafer

Description: The technology encompasses a semiconductor with source and drain regions, a gate electrode situated between these regions, and an insulator comprising an air layer and a gate oxide layer. Uniquely, the gate electrode is vertically movable within the air layer of the insulator, offering distinct advantages in conductivity and performance....

Published: 1/27/2026 | Updated: 12/12/2024 | Inventor(s): Heung Seok Kang, In-Hyouk Song, Byoung Hee You, Kang-Hee Lee

Keywords(s): Enhancing Electrical Conductivity, Semiconductor Device, Vertically Movable Gate Electrode

Category(s): Semiconductors, Engineering

Material Selective Regrowth Structure and Method

Description: This technology outlines a precise method for constructing nanoscale structures by forming a window in a semiconductor structure and sequentially depositing and regrowing materials within this window. The process involves a substrate, a first layer, and a mask layer, where a second layer is deposited such that a gap remains. This gap is...

Published: 1/27/2026 | Updated: 7/26/2024 | Inventor(s): Edwin Piner

Keywords(s): Depositing and Regrowing Materials, Nanoscale Structures, Semiconductor Structure

Category(s): Nanotechnology, Semiconductors