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Fabrication of Hexagonal ε-(InxGa1-x)2O3 Thin Films on AlN via Pulsed Laser Deposition

Description: This technology provides a novel approach to fabricating hexagonal ε-(InxGa1-x)2O3 thin films on AlN/Sapphire templates by carefully controlling pulsed laser deposition parameters such as heater temperature, oxygen pressure, and laser settings. It overcomes challenges like orthorhombic phase formation and indium desorption, enabling...

Published: 5/27/2026 | Updated: 5/27/2026 | Inventor(s): Ariful Haque, Maria Sultana, Brian Samuels

Keywords(s): Additive Manufacturing, Engineering, Materials, Nanotechnology, Semiconductors, Thin Film Deposition Technologies

Category(s): Materials > Advanced Materials, Semiconductors, Materials, Nanotechnology, Engineering