Search Results - ariful+haque

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Fabrication of Hexagonal ε-(InxGa1-x)2O3 Thin Films on AlN via Pulsed Laser Deposition

Description: This technology provides a novel approach to fabricating hexagonal ε-(InxGa1-x)2O3 thin films on AlN/Sapphire templates by carefully controlling pulsed laser deposition parameters such as heater temperature, oxygen pressure, and laser settings. It overcomes challenges like orthorhombic phase formation and indium desorption, enabling...

Published: 5/27/2026 | Updated: 5/27/2026 | Inventor(s): Ariful Haque, Maria Sultana, Brian Samuels

Keywords(s): Additive Manufacturing, Engineering, Materials, Nanotechnology, Semiconductors, Thin Film Deposition Technologies

Category(s): Materials > Advanced Materials, Semiconductors, Materials, Nanotechnology, Engineering

Pulsed Laser Annealing for Diamond Doping

Description: This innovative method uses pulsed laser annealing (PLA) to incorporate and activate dopants in diamond thin films by first depositing a dopant precursor layer on the diamond surface and then applying targeted laser pulses. The process improves doping precision while reducing thermal damage compared to conventional techniques. Experimental...

Published: 3/10/2026 | Updated: 3/10/2026 | Inventor(s): Ariful Haque, Saif Taqy

Keywords(s): Microelectronics, Nanotechnology, Semiconductor Materials, Semiconductors

Category(s): Nanotechnology, Semiconductors

Pulsed Laser Annealing Doping Technique for Aluminum Nitride (AlN)

Description: This innovative technique involves depositing a dopant precursor film on AlN substrates followed by PLA, which facilitates efficient dopant incorporation and activation. The process leverages rapid, localized heating to overcome challenges associated with doping AlN’s ultrawide bandgap and high resistivity. Validation through X-ray...

Published: 3/10/2026 | Updated: 3/10/2026 | Inventor(s): Ariful Haque, Saif Taqy

Keywords(s): Microelectronics, Nanotechnology, Semiconductor Materials, Semiconductors

Category(s): Semiconductors, Nanotechnology

Surface Doping of Polycrystalline CVD Diamond Via Submerged Laser Annealing for Semiconductor Applications

Description: This innovation presents a pioneering method to dope polycrystalline CVD diamond by first immersing the diamond samples in a dopant-containing solution followed by a pulsed laser annealing under ambient conditions. This two-step process promotes the diffusion and activation of dopant atoms like boron into the diamond lattice without compromising...

Published: 5/11/2026 | Updated: 12/16/2025 | Inventor(s): Ariful Haque, Adedayo Alaga, Saif Taqy

Keywords(s): Material Science, Nanotechnology, Semiconductor Technology, Semiconductors

Category(s): Nanotechnology, Semiconductors, Material Science