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Material Selective Regrowth Structure and Method

Description: This technology outlines a precise method for constructing nanoscale structures by forming a window in a semiconductor structure and sequentially depositing and regrowing materials within this window. The process involves a substrate, a first layer, and a mask layer, where a second layer is deposited such that a gap remains. This gap is...

Published: 7/29/2024 | Inventor(s): Edwin Piner

Keywords(s): Depositing and Regrowing Materials, Nanoscale Structures, Semiconductor Structure

Category(s): Nanotechnology, Semiconductor Fabrication