Material Selective Regrowth Structure and Method

Description:

This technology outlines a precise method for constructing nanoscale structures by forming a window in a semiconductor structure and sequentially depositing and regrowing materials within this window. The process involves a substrate, a first layer, and a mask layer, where a second layer is deposited such that a gap remains. This gap is then filled by regrowing the material of the first layer, with the cycle of depositing and regrowth repeating as necessary to achieve the desired nanoscale structure. The method allows for the creation of structures with varying sizes, shapes, and materials.

Key Advantages:

• Precise control over nanoscale structure formation.
• Flexibility in creating structures of varying sizes, shapes, and materials.
• Applicability to a wide range of semiconductor and nanotechnology applications.

Problems Solved:

• Difficulty in creating uniform nanoscale structures within semiconductor materials.
• Lack of control in the sizes, shapes, and material composition of nanoscale structures.

Market Applications:

• Nanoelectronics and semiconductor devices fabrication.
• Advanced sensors and optical devices.
• Quantum computing components.