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Pulsed Laser Annealing for Diamond Doping

Description: This innovative method uses pulsed laser annealing (PLA) to incorporate and activate dopants in diamond thin films by first depositing a dopant precursor layer on the diamond surface and then applying targeted laser pulses. The process improves doping precision while reducing thermal damage compared to conventional techniques. Experimental...

Published: 3/10/2026 | Updated: 3/10/2026 | Inventor(s): Ariful Haque, Saif Taqy

Keywords(s): Microelectronics, Nanotechnology, Semiconductor Materials, Semiconductors

Category(s): Nanotechnology, Semiconductors

Pulsed Laser Annealing Doping Technique for Aluminum Nitride (AlN)

Description: This innovative technique involves depositing a dopant precursor film on AlN substrates followed by PLA, which facilitates efficient dopant incorporation and activation. The process leverages rapid, localized heating to overcome challenges associated with doping AlN’s ultrawide bandgap and high resistivity. Validation through X-ray...

Published: 3/10/2026 | Updated: 3/10/2026 | Inventor(s): Ariful Haque, Saif Taqy

Keywords(s): Microelectronics, Nanotechnology, Semiconductor Materials, Semiconductors

Category(s): Semiconductors, Nanotechnology