Surface Doping of Polycrystalline CVD Diamond Via Submerged Laser Annealing for Semiconductor Applications

Description:

This innovation presents a pioneering method to dope polycrystalline CVD diamond by first immersing the diamond samples in a dopant-containing solution followed by a pulsed laser annealing under ambient conditions. This two-step process promotes the diffusion and activation of dopant atoms like boron into the diamond lattice without compromising its structural integrity. By carefully controlling immersion parameters and laser pulse conditions, this method ensures effective substitutional doping, reduces non-diamond carbon content, and prevents surface defects or delamination. Multiple characterization techniques including XPS, SEM, Raman spectroscopy, AFM, Hall effect, and IV measurements confirmed successful dopant incorporation, enhanced crystal quality, improved surface morphology, and stable ohmic electrical behavior across a broad temperature range, demonstrating significant potential in advanced semiconductor and optoelectronic applications.

 

Key Advantages:

  • Precise control of dopant incorporation using immersion and laser annealing.
  • Maintains diamond’s crystal integrity with minimal defects or surface degradation.
  • Improves electrical conductivity and carrier concentration via boron doping.
  • Reduces non-diamond carbon phases enhancing overall material quality.
  • Effective at ambient conditions without requiring complex high-temperature environments.
  • Rapid, localized thermal processing preserving bulk material properties.

 

Problems Solved:

  • Difficulty integrating dopants into diamond lattices for semiconductor use.
  • Surface damage or delamination from traditional high-temperature doping methods.
  • Presence of non-diamond carbon adversely affecting electrical properties.
  • Limited electrical conductivity and carrier activation in doped diamond.
  • Need for scalable, controllable doping methods compatible with various diamond types.

 

Market Applications:

  • High-performance semiconductor devices and sensors.
  • High-temperature electronics requiring robust diamond substrates.
  • Optoelectronic components and photodetectors.
  • Power electronics leveraging diamond’s superior thermal conductivity.
  • Advanced coatings for enhanced electrical and optical functionality.

 

Patent Information:
Title App Type Country Serial No. Patent No. File Date Issued Date Expire Date Patent Status
Surface Doping of Polycrystalline CVD Diamond via Submerged Laser Annealing for Semiconductor Applications Provisional United States 63/822,972   6/13/2025   6/15/2026 Pending
For Information, Contact:
Robert Reis
Licensing Associate
Texas State University - San Marcos
svj24@txstate.edu
Inventors:
Ariful Haque
Adedayo Alaga
Saif Taqy
Keywords:
Material Science
Nanotechnology
Semiconductor Technology
Semiconductors
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