This innovation presents a pioneering method to dope polycrystalline CVD diamond by first immersing the diamond samples in a dopant-containing solution followed by a pulsed laser annealing under ambient conditions. This two-step process promotes the diffusion and activation of dopant atoms like boron into the diamond lattice without compromising its structural integrity. By carefully controlling immersion parameters and laser pulse conditions, this method ensures effective substitutional doping, reduces non-diamond carbon content, and prevents surface defects or delamination. Multiple characterization techniques including XPS, SEM, Raman spectroscopy, AFM, Hall effect, and IV measurements confirmed successful dopant incorporation, enhanced crystal quality, improved surface morphology, and stable ohmic electrical behavior across a broad temperature range, demonstrating significant potential in advanced semiconductor and optoelectronic applications.